- 您现在的位置：买卖IC网 > Sheet目录1220 > IP-ED8B10B (Altera)IP 8B10B ENCODER/DECODER
Chapter 1: About This MegaCore Function
1–3
Performance and Resource Utilization
Performance and Resource Utilization
This section lists the resource utilization and performance of the 8B10B
Encoder/Decoder MegaCore function in different Altera device families. These
results were obtained using the Quartus ? II software version 9.1 with the auto-ROM
replacement feature disabled. Enabling this feature produces a smaller but slower
MegaCore function.
Table 1–3 shows the performance and resource utilization for Cyclone II
(EP2C35F484C6) and Cyclone III (EP3C80F780C6).
Table 1–3. Resource Utilization and Performance (Cyclone II and Cyclone III)
Parameters
Device
Cyclone II
Cyclone III
Mode of Operation
Encoder
Encoder
Decoder
Encoder
Encoder
Decoder
Register
Inputs/Outputs
On
Off
–
On
Off
–
LEs
100
107
131
100
107
131
f MAX (MHz) (1)
250
403
403
250
403
403
Note to Table 1–3 :
(1) f MAX is for non-cascaded encoders/decoders.
Table 1–4 shows the performance and resource utilization for Stratix II
(EP2S30F484C3) and Stratix III (EP3SE110F780C2). The performance of the MegaCore
function in Stratix IV devices is similar to Stratix III devices.
Table 1–4. Resource Utilization and Performance (Stratix II and Stratix III)
Parameters
Device
Stratix II
Stratix III
Mode of Operation
Encoder
Encoder
Decoder
Encoder
Encoder
Decoder
Register
Inputs/Outputs
On
Off
–
On
Off
–
Combinational
ALUTs
61
68
55
60
68
55
Logic
Registers
51
13
33
51
13
33
f MAX (MHz) (1)
444
585
447
510
675
520
Note to Table 1–4 :
(1) f MAX is for non-cascaded encoders/decoders.
May 2011
Altera Corporation
8B10B Encoder/Decoder MegaCore Function User Guide
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
IP-FFT
IP FFT/IFFT
IP-FIR
IP FIR COMPILER
IP-NCO
IP NCO COMPILER
IP-NIOS
IP NIOS II MEGACORE
IP-PCI/MT64
IP PCI 64BIT MASTER/TARGET
IP-PCIE/8
IP PCI EXPRESS, X8
IP-POSPHY4
IP POS-PHY L4
IP-RIOPHY
IP RAPID I/O
相关代理商/技术参数
IPEH-002021E
制造商:Phytec 功能描述:PCAN-USB
IPF039N03L G
功能描述:MOSFET N-CH 30V 50A 3.9mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IPF039N03LG
制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:OptiMOS?3 Power-Transistor Features Fast switching MOSFET for SMPS
IPF04N03LA
功能描述:MOSFET N-CH 25V 50A DPAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:OptiMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
IPF04N03LA G
功能描述:MOSFET N-CH 25V 50A DPAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:OptiMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
IPF04N03LAG
功能描述:MOSFET N-Channel MOSFET 20-200V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IPF04N03LBG
制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:OptiMOS㈢2 Power-Transistor
IPF050N03LG
功能描述:MOSFET N-Channel MOSFET 20-200V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube